Title of article
Pulsed laser deposition of metals in low pressure inert gas
Author/Authors
Kai Sturm )، نويسنده , , Sebastian Fa¨hler 1، نويسنده , , Hans-Ulrich Krebs، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
5
From page
462
To page
466
Abstract
The influence of an ambient Ar gas on the pulsed laser deposition PLD.of metallic systems Ag, Fe, FerAg.is
examined. Time-of-flight TOF.measurements and measurements of the deposition rate are presented showing a reduction
of particle energy with increasing Ar pressure and a reduction of resputtering and interface mixing. The determined Ar
pressure for significant changes of the effective sputter yield is about 0.04 mbar. The experimental results are explained by
scattering of a dense cloud of ablated material in a diluted gas. q2000 Elsevier Science B.V. All rights reserved
Keywords
pulsed laser deposition , Metals , Sputter yield , Deposition in gas atmosphere , thin films
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
995959
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