Title of article
Optically induced defects in vitreous silica
Author/Authors
S. Juodkazis، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
5
From page
696
To page
700
Abstract
We report the observation of photoluminescence PL. in optically damaged vitreous silica v-SiO2. and its gradual
decrease by annealing at temperature range from room temperature to 773 K. Optical damage was induced by tightly focused
picosecond or femtosecond irradiation inside v-SiO2. PL bands at 280, 470 and 650 nm were observed. The PL can be
excited by 250 nm irradiation, which corresponds to the absorption band of the oxygen vacancy, VO. The decrease of PL
with annealing is explained by structural modifications of the defects in the damaged area. q2000 Elsevier Science B.V. All
rights reserved
Keywords
Laserfabrication , silica , Light induced defects , Photoluminescence , Thermal annealing of defects , Three-dimensional optical memory
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
995997
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