Title of article
Comparison of InGaAs 100/grown by chemical beam epitaxy and metal organic chemical vapor deposition
Author/Authors
M.D. Williams، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
6
From page
123
To page
128
Abstract
Secondary ion mass spectrometry is used to study the effects of substrate temperature on the composition and growth rate
of InGaAsrInP 100. multilayers grown by chemical beam epitaxy, metal-organic chemical vapor deposition and solid
source molecular beam epitaxy. The growth kinetics of the material grown by the different techniques are analyzed and
compared. q2000 Elsevier Science B.V. All rights reserved
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
996042
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