The caesium enhancement effect observed during SIMS ultra shallow depth profile analysis of SiO on Si

Exponential-like trends were observed between the implanted Cs concentration and the secondary ion intensities of Siy and Oy resulting from 1 keV Csq primary ion ultra shallow depth profile analysis of Si bearing 0.9 and 6 nm SiO2 films. The Cs concentration as a function of Csq flux was derived via X-ray photoelectron spectroscopy XPS.of the elemental composition present within the sputtered craters that were terminated at incrementally shorter Csq sputtering times across the secondary ion transient region. The variation in the secondary ion signals with Cs content is consistent with a dipole layer formation mechanism. Derivation of analytical functions describing this Cs enhancement effect allows for the removal of the transient effects observed in the Siy and Oy secondary ion depth profiles. q2000 Elsevier Science B.V. All rights reserved.