Effects of Si doping on ordering and domain structures in GaInP

The effects of Si doping on ordering and domain structures in GaInP grown by organometallic vapour phase epitaxy on 001.GaAs singular and vicinal substrates at 6208C have been investigated by transmission electron microscopy TEM.and transmission electron diffraction TED.. TEM results show that the behaviour of antiphase boundaries APBs.in the singular samples differs from that of the vicinal samples. As the carrier concentration increases, the density of APBs in the vicinal samples increases slightly, whilst that of the singular samples varies insignificantly. APBs are inclined some degrees from thew001xgrowth surface. TEM results show that for the highly doped samples, the ordered domains contain dark mottled contrast corresponding to either much less ordered regions or disordered regions. TED results show that the ordering is present in layers exceeding a concentration of ;2.0=1018 cmy3. q2000 Elsevier Science B.V. All rights reserved.