Measurement and analysis of the characteristic parameters for the porous siliconrsilicon using photovoltage spectra

The photovoltage spectra of the porous siliconrsilicon PSrSi.formed on the p-type silicon substrates of 111:and 100:orientation by different electrochemical anode etching conditions are measured. The photovoltage expressions with relation to the characteristic parameters are derived. The characteristic parameters: the bandgap, the carrier lifetime, and the intrinsic carrier concentration of the porous silicon layer, and the heterojunction barrier width of the PSrSi, are calculated from the measured photovoltage by using the theoretical expressions. Some calculated results are compared with the experiments. It is shown that the results are basically reasonable. q2000 Elsevier Science B.V. All rights reserved