X-ray photoelectron and Raman spectroscopy of nanocrystalline Ga In Sb–SiO composite films

Nanocrystalline Ga0.62 In0.38Sb particles embedded in SiO2 matrix were grown by radio frequency RF. magnetron co-sputtering. X-ray diffraction XRD.patterns and X-ray photoelectron spectroscopy XPS.strongly support the existence of separated nanocrystalline Ga0.62 In0.38Sb material in a SiO2 matrix. XPS core level data also reveal that there exists a SiO2 layer with a 1.1 eV chemical shift compared to that of pure SiO2, indicating that the SiO2chemically adheres to the Ga0.62In0.38Sb. Room temperature Raman spectrum shows that the Raman peaks of Ga0.62In0.38Sb–SiO2 composite film have a larger red shift of 95.3 cmy1 LO. and 120.1 cmy1 TO. than those of bulk GaSb, suggesting the existence of phonon confinement and tensile stress effects. q2000 Elsevier Science B.V. All rights reserved.