Electrically detected magnetic resonance of near-interface defects in Si pn-junction structures with LOCOS isolation

Electrically detected magnetic resonance EDMR.measurements on planar Si pn-junctions with LOCOS isolation show different types of point defects. We observe Pb-centers at the SiO2rSi interface and detect for the first time via EDMR the so-called ‘‘74G doublet’’ — hydrogen-complexed oxygen vacancies in SiO2 LOCOS isolation.. The location of the probed oxide defects has to be close enough to the SiO2rSi interface so that a communication with the junction current can take place. q2000 Elsevier Science B.V. All rights reserved.