Structural evolution and valence electron-state change during ultra thin silicon-oxide growth

We have studied valence electron-state changes of Si during initial oxidation of Si 111.clean surface, HF-treated Si 001. and Si 111.surfaces by Auger valence electron spectroscopy AVES.. The results showed that the valence electron-state changes during initial oxidation were sensitively reflected in Siw2s,2p,Vx Vs3s,3p.AVES spectra and that they depended on both initial surface treatment and surface orientation. The local valence electron-states, local density of states in other words, showed the characteristic-structure evolution depending on the initial surface treatment and surface orientation. q2000 Published by Elsevier Science B.V.