Orientation dependence of ferroelectric properties of Pb Zr Ti /O thin films on PtrSiO rSi substrates

We have grown thin Pb Zr Ti .O PZT.films on PtrSiO rSi substrates by pulsed laser ablation PLA.and x 1yx3 2 subsequent rapid thermal annealing RTA.. X-ray diffraction analysis showed that the crystallographic orientation of PZT films after RTA clearly depended on the microstructure of as-deposited films. The preferentially 100.-oriented perovskite PZT films were obtained from the as-deposited films that had contained small grains having pyroclore structure. The capacitors made from these films showed high remnant polarization and good fatigue properties. q2000 Elsevier Science B.V. All rights reserved