Defect causing nonideality in nearly ideal AurSi Schottky barrier

Previously we have proposed a model of lattice defect, positively charged defect close to the MrS interface, which causes nonideality in nearly ideal AurSi Schottky barrier. This model is elaborated in this paper. The To anomaly is caused by the spatial inhomogeneity of Schottky barrier height SBH.due to the same defect, which is expressed by a Gaussian distribution with standard deviation s . The ideality factor n is related with s 2, which depends on applied voltage. Utilizing a relation between the local SBH lowering and the distance of defect from metal-induced gap state MIGS., the defect distribution, 6=1013 cmy2 in total, is obtained to be confined close about 10 A°.to the MIGS. Changes of the distribution with applied bias indicate that the defect is an ionized donor in an equilibrium with neutral state in a low SBH region. The defect is induced by the Au evaporation process which produces Au silicide. Si self-interstitial induced by the process has appropriate atomic and electronic properties as the defect with deep donor levels of the negative-U property. q2000 Elsevier Science B.V. All rights reserved.