Epitaxial growth of Bi Sr CuO films onto Si 001/ by molecular 2 2 x beam epitaxy

We have studied the epitaxial growth of Bi2Sr2CuOx superconductor films onto a Si 001.substrate using a double buffer layer consisting of SrTiO3 and SrO by molecular beam epitaxy MBE.. The Bi2Sr2CuOx films are grown by a co-evaporation method with an oxygen radical source. The Bi2Sr2CuOx films do not grow directly on a Si 001.substrate under the same condition as the epitaxial growth on a commercial SrTiO3 001.substrate. Also, the Bi2Sr2CuOx films do not grow on an MBE-grown SrO 001. filmrSi 001. substrate, but grow on an MBE-grown SrTiO3 001. filmrSrO 001.rSi 001.. The epitaxial growth of the Bi2Sr2CuOx films on SrTiO3 001.rSrO 001.rSi 001.system is compared with that of the Bi2Sr2CuOx films on a commercial SrTiO3 001.substrate. The X-ray diffraction XRD.pattern shows the growth of Bi2Sr2CuOx 001. on SrTiO3rSrOrSi. The reflection high-energy electron diffraction RHEED. of the Bi2Sr2CuOx film grown on a SrTiO3 001.film shows a streak pattern with vague rings. The streak pattern is partially similar to an RHEED pattern of Bi2Sr2CuOx grown on a commercial SrTiO3 001.substrate. q2000 Elsevier Science B.V. All rights reserved.