The effect of a thin antimony layer addition on PdZn ohmic contacts for p-type InP

The effects of addition of thin Sb layers to PdZn ohmic contacts for p-type InP were investigated. The Sb layers reduced significantly the contact resistivity of the PdZn contacts, and provided excellent reproducibility and a wide annealing temperature range to produce low resistances. The minimum contact resistivity of 7=10y5 V cm2 was obtained for the Sb 3 nm.rZn 20 nm.rPd 20 nm.contacts, annealed at temperature ranging from 3758C to 4008C for 2 min, where a slash r. sign indicates the deposition sequence. Since this annealing temperature is close to that used for preparation of typical AuGeNi ohmic contacts to n-InP, simultaneous annealing for p- and n-InP ohmic contacts can be achieved by using the SbrZnrPd and AuGeNi ohmic contacts for p- and n-InP, respectively. q2000 Published by Elsevier Science B.V.