Influence of reactive ion etching damage on the Schottky barrier height of Tirp–Si interface

Change in Schottky barrier height SBH.of TirSi surface damaged by CHF3rO2plasma treatment was investigated as a function of annealing temperature. SBH of the damaged interface was initially higher than that of clean interface. The SBH of damaged interface increased with increasing the annealing temperature up to 4008C, while SBH of the samples without damage did not change. It was found that the increase in SBH was due to the formation of Ti5Si3under the influence of the plasma-induced damage. At the annealing temperature of 6008C, the SBH values of damaged and undamaged interfaces became almost identical due to C49 TiSi2 formation. q2000 Published by Elsevier Science B.V.