Relation between interface morphology and recombination-enhanced defect reaction phenomena in II–VI light emitting devices

We investigated the relation between interface morphology and recombination-enhanced defect reaction REDR. phenomena in II–VI light emitting devices LEDs.using electroluminescence EL., atomic force microscopy AFM.and transmission electron microscopy TEM.. REDR phenomena are observed as nucleation and growth of dark-area defects DADs.in the EL images. The growth direction of DADs depends on the IIrVI ratio, which affects interface morphology and the composition modulation in the alloy layers. We discuss a possible relation between the growth direction of dark defects and interface morphology andror composition modulation. q2000 Elsevier Science B.V. All rights reserved.