Title of article
Molecular beam epitaxy of GaSb with high concentration of Mn
Author/Authors
F. Matsukura، نويسنده , , E. Abe، نويسنده , , Y. Ohno، نويسنده , , H. Ohno، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
5
From page
265
To page
269
Abstract
Molecular-beam epitaxial growth and characterization of GaSb films with high concentration of Mn several percents.are
presented. The result shows that almost all Mn atoms in GaSb forms MnSb clusters at normal growth temperature
;5608C., and that low growth temperature ;2508C.suppresses the formation of MnSb and a few tens of percent of Mn
are incorporated in the host GaSb. q2000 Elsevier Science B.V. All rights reserved
Keywords
magnetic semiconductor , III–V compound , GaSb , MAGNETIZATION , Surface morphology , Magnetotransport
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
996180
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