Low temperature growth interface for growing Boron Monophosphide on Si substrates

Boron monophosphide BP.thin layer has been grown on Si 100.surface by using low temperature growth process. The low temperature layer is an aggregate of small crystalline particles with small inclined angles to Si 100.. This layer provides nucleation centers for growing BP layer. To elucidate the effect of BP layer, GaN layer was grown on BPrSi. It has been found that cubic GaN has been successfully grown on BP layer. q2000 Elsevier Science B.V. All rights reserved