MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor

In order to build a numerical model for the growth of ternary InGaAs, InGaP.or quaternary materials InGaAsP., data on growth rate and composition distributions in a horizontal reactor have been collected. Samples were grown from trimethylindium, trimethylgallium, tert-butylarsine and tert-butylphosphine. Composition analyses were carried out by X-ray photoelectron spectroscopy. The results are discussed in relation to preliminary simulation works and a linear combination model based on experimental data for binary materials growth. The study enhances the understanding of growth mechanisms. Henceforth, modelling of InGaAsP growth seems possible but accurate simulation should take into account multicomponent diffusion and the enhancement of precursors’ decomposition occurring while mixed. q2000 Elsevier Science B.V. All rights reserved.