Title of article
Quantum chemical mechanism of oxidation of the hydrogen-terminated Si surface by oxygen anion
Author/Authors
Ken Sakata، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
6
From page
392
To page
397
Abstract
The total electronic energies of the hydrogen-terminated Si surface with various oxygen species are calculated to study
the oxidation process of the Si surface. It is shown that the oxygen anion adheres to the surface the most strongly. q2000
Elsevier Science B.V. All rights reserved
Keywords
Hydrogen-termination , Film growth , First principle calculation , Oxygen anion
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
996201
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