Realization of crack-free and high-quality thick Al Ga N for x 1yx UV optoelectronics using low-temperature interlayer

Crack-free and high-quality thick Al Ga N, with x ranging from 0 to 1, has been grown on sapphire, using a x 1yx low-temperature interlayer. The low-temperature AlN interlayer reduces tensile stress during the growth of Al Ga N, x 1yx while simultaneously improving the crystalline quality. The Al Ga N film was characterized by high-resolution X-ray x 1yx diffraction XRD.and transmission electron microscopy TEM.. q2000 Elsevier Science B.V. All rights reserved.