In situ gravimetric monitoring of halogen transport atomic layer epitaxy of cubic-GaN

Atomic layer epitaxy ALE.of cubic-GaN on GaAs 001.substrates is tried by alternate supply of GaCl and NH3, and the growth process is monitored in situ using gravimetric monitoring GM. method. It is found that one monolayer ML.rcycle growth of a pure cubic-GaN is possible when the growth is performed at 4008C on 25-nm-thick GaN buffer layerrGaAs 001.substrate. On the other hand, three-dimensional 3D.growth occurs when the growth is performed directly on GaAs substrate, and crystallinity of the grown layer is amorphous. q2000 Elsevier Science B.V. All rights reserved.