Scanning tunneling microscopy and time-resolved photoluminiscence spectroscopy study of self-organized GaPrInP quantum dot structures

GaPrInP short period superlattices SLs.are grown on GaAs 311.A substrates by gas source molecular beam epitaxy MBE.. Scanning tunneling microscopyrspectroscopy STMrSTS. measurements show that the quantum dot QD. structures are self-formed with a lateral density of ;1011 cmy2. Growth temperature dependence of self-formed structures is studied with STMrSTS and clear temperature dependence is observed. Optimum growth temperature is about 4608C. Time-resolved photoluminescence PL.spectroscopy measurement on the multilayer QD MQD.structures shows that the PL decay time strongly depends on emission energy and temperature, and ranges from 0.1 to 2.5 ns, which can be explained by considering the tunneling effect of carriers between QDs. q2000 Elsevier Science B.V. All rights reserved.