Epitaxial growth of 3C-SiC films on Si substrates by triode plasma CVD using dimethylsilane

The epitaxial growth of cubic-silicon carbide SiC. on Si substrates was carried out by triode plasma CVD using dimethylsilane DMS.as source gas. The lowering of electron temperature and the reduction of the rf fluctuation of plasma space potential in the afterglow plasma region were realized by applying negative grid bias and adding bypass condensers between cathode and grid electrode. The substrate temperature was rapidly raised from 5008C to the growth temperatures in the flow of hydrogen and DMS, followed by the epitaxial growth. By this growth procedure, the SiC films with good surface morphology were grown. q2000 Elsevier Science B.V. All rights reserved.