Characterization of GaS-deposited CVD diamond films by AES and XPS

Thin GaS films deposited on B-doped diamond as-grown.and on oxygen-annealed B-doped diamond O-ann..films grown by plasma-assisted chemical vapor deposition CVD.on pq-type Si 001. substrate were characterized by Auger electron spectroscopy AES., and X-ray photoemission spectroscopy XPS.. The thermal evaporation of GaS single crystal is used for the deposition. Ga and S Auger peaks are observed in the AES spectra of both GaS-deposited samples, and only weak S-Auger peaks are observed in the samples post-annealed at about 9008C. XPS spectra indicate an upward band bending due to GaS deposition and the increase in the downward band bending due to post-annealing at higher temperature. C`S and C`Ga bonds are observed for GaS-deposited diamond films. Secondary electron emission SEE.spectra indicate that the S-terminated diamond films seem to possess positive electron affinity PEA.surface. q2000 Elsevier Science B.V. All rights reserved.