CrSi films synthesized by high current Cr ion implantation and 2 their physical properties

Continuous and plain n-type CrSi2 semiconductor layers featuring a relatively sharp interface with the underneath Si were synthesized by a single-step metal vapor vacuum arc MEVVA.ion implantation and the synthesizing process was reproducible. Hall measurements showed that the electrical parameters changed with the formation temperature. At an optimal formation temperature of 2608C, a high room temperature RT.Hall mobility of 1085 cm2 Vy1 sy1 was obtained. Besides, the bandgap values of 0.7 and 0.84 eV were observed for the CrSi2 layers formed under different experimental conditions. The mechanism responsible for the formation of CrSi2 layers on Si wafers is also discussed. q2000 Elsevier Science B.V. All rights reserved