Synchrotron radiation studies on the growth of TSe TsTa, Ti/ 2 thin films on Ta substrates: intercalation and de-intercalation of Na

In this paper, we study the formation of TSe2 TsTa, Ti.-layered compound thin films, grown on polycrystalline Ta substrates. The experiments were performed in UHV by means of photoemission spectroscopy with synchrotron radiation measurements. The adsorption of elemental Se on Ta substrate at RT produces a film of Se multilayers. With subsequent heating up to 4508C, the deposited Se interacts with Ta, leading to the formation of a TaSe2 thin film. The simultaneous co-adsorption of Se and TiCl4on clean polycrystalline Ta at 2508C produces a TiSe2film of ;5 molecular layers. The production of TiSe2 film has been confirmed by Na intercalation and following de-intercalation of Na by exposure of the NarTiSe2film to TiCl4. q2000 Elsevier Science B.V. All rights reserved.