Modification of tin dioxide thin films by ion implantation

Tin oxide films prepared by sputtering deposition were subjected to W, O implantation and annealing. XRD and XPS were used to characterize the films. The effects of implantation on the phase transform in the films were studied. Deposition by sputtering a SnO2target at room temperature yields amorphous SnO2. O implantation induces a transform of amorphous SnO2into crystalline SnO2. W implantation induces SnO formation in the amorphous film. W implanted and then O implanted films show evidence of Sn3O4. W implantation decreases the O:Sn ratio of the phases composed of tin and oxygen in the film while O implantation increases this ratio. q2000 Elsevier Science B.V. All rights reserved.