• Title of article

    Si H adsorption and hydrogen desorption on Si 100/ 2 6 investigated by infrared spectroscopy

  • Author/Authors

    Michio Niwano and Nobuo Miyamoto، نويسنده , , Masanori Shinohara، نويسنده , , Yoichiro Neo )، نويسنده , , Kuniyoshi Yokoo، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2000
  • Pages
    5
  • From page
    111
  • To page
    115
  • Abstract
    The adsorption and decomposition of disilane on Si 100. 2=1.was investigated using in-situ infrared IR.absorption spectroscopy. The IR data demonstrate that upon room-temperature adsorption, disilane dissociatively adsorbs on the unsaturated dangling bonds of dimers with the dimer bonds unbroken, to produce mono-, di-, and tri-hydride species. At low coverages, dissociative adsorption without breaking of the Si`Si bond of Si2H6 is favored. Thermal annealing following room-temperature disilane adsorption produces the doubly-occupied adatom dimers DOD, HSi`SiH.and isolated monohydride species. These hydride species are generated via the rupture of dimer bonds of the substrate. Hydrogen desorption from the isolated monohydride site occurs at lower temperatures than from the DOD site. q2000 Elsevier Science B.V. All rights reserved.
  • Keywords
    Disilane , Si surface , Infrared absorption , adsorption , thermal decomposition
  • Journal title
    Applied Surface Science
  • Serial Year
    2000
  • Journal title
    Applied Surface Science
  • Record number

    996308