In situ electron spin resonance of initial oxidation processes of Si surfaces

We have made for the first time electron spin resonance ESR.measurements on Si 111.7=7 and Si 100.2=1 surfaces during the initial oxidation processes at room temperature. The present results clearly show that, at a very initial stage of oxidation of Si surfaces where only a few surface layers were oxidized, a variety of defects are formed that have not been seen in ex situ ESR studies of SiO2rSi structures. q2000 Elsevier Science B.V. All rights reserved.