Elastic scattering of Si 2p photoelectrons in ultrathin silicon oxides

The effects of oxidation on the photoelectron diffraction pattern originating from a silicon substrate were measured and simulated using the Monte Carlo method for calculating the path of scattered electrons in silicon oxide formed on Si 100.. The results of these simulations revealed a total elastic scattering cross-section of 1.5=10y20 m2 and an inelastic scattering cross-section of 1.6=10y20 m2. In only particular photoemission directions, the effect of elastic scattering of electrons in silicon oxide is shown to be minimized on the basis of the results of these simulations, and the concept of escape depth can be used to determine the oxide film thickness. q2000 Elsevier Science B.V. All rights reserved.