Title of article
Trap creation in ultrathin SiO films due to electron injection 2 studied by scanning tunneling microscopyrscanning tunneling spectroscopy
Author/Authors
Kenji Ohmori، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
6
From page
395
To page
400
Abstract
Scanning tunneling microscopy STM. and scanning tunneling spectroscopy STS. have been employed for the
investigation of trap creation in ultrathin SiO2 films on an atomic scale. Bright spots created by electron injection using
STM tips were observed in STM images. The density of bright spots depends on the injection voltage and temperature.
Comparing STS spectra obtained from electron-injected SiO2 films with those from a fresh film, we have found that the
bright spots are related to positively charged traps in the SiO2films and caused a band bending near the SirSiO2interface.
q2000 Elsevier Science B.V. All rights reserved
Keywords
Silicon oxide , Trap creation , Local electronic states , Scanning tunneling microscopy , Scanning tunneling spectroscopy
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
996352
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