Growth and optimization of InAsrGaSb and GaSbrInAs interfaces

In order to optimize the molecular beam epitaxy growth of indium arsenide–gallium antimonide structures, we study the effects of the stacking sequence of the interfacial monolayer and of the growth temperature. To this end, GaSbrInAs and InAsrGaSb heterojunctions involving ultra-thin epilayers have been fabricated at 3508C, 4008C and 4508C with In–Sb- or Ga–As-like interfaces. The structures have been investigated by reflection high-energy electron diffraction, Auger electron microscopy and atomic force microscopy. The best growth condition for InAs 100.as well as GaSb 100.have been obtained with a substrate temperature of 4008C and an In–Sb-like InAs–GaSb interface. q2000 Elsevier Science B.V. All rights reserved