1D electronic properties in temperature-induced c 4=2/to2=1 transition on the b-SiC 100/ surface

We investigate the temperature-induced phase transition on Si-terminated b-silicon carbide SiC. 100. surface using scanning tunneling microscopy STM.and spectroscopy, and valence band and core level photoemission spectroscopies using synchrotron radiation. Above 700 K, the 2=1 surface exhibits metallization with a non-Fermi liquid power law shape spectral response near the Fermi level. This suggests a surface having one-dimensional 1D.metallicity related to the Si–Si dimers rows constituting the topmost atomic layer. This behavior can be related to the Luttinger liquid model. q2000 Published by Elsevier Science B.V.