Staggered vertical self-organization of stacked InAsrInAlAs quantum wires on InP 001/

Using atomic force microscopy AFM.imaging, transmission electron microscopy TEM.and photoluminescence PL., we have studied InAs stacked islands on InP 001.versus the InAlAs spacer layer thickness SLT.. We have found that first wire-like island shape is strongly favored by such a stacking process and second in the 10–25 nm SLT range, the wire size and height are dependent on the SLT. TEM images show off a new surprising staggered vertical island organization that can be explained by the phase separation appearing in the InAlAs spacer layers. q2000 Elsevier Science B.V. All rights reserved.