Title of article
Analysis of the sidewall films formed during Si trench etching with photoresist mask in Cl rHBr-based plasma
Author/Authors
Sang-Do Lee)، نويسنده , , So-Young Nam، نويسنده , , Jae-Hee Ha، نويسنده , , Jinwon Park، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
8
From page
1
To page
8
Abstract
The sidewall passivation films produced during Si trench etching with photoresist masks were examined in two etching
systems, helicon and inductively coupled plasma ICP.. The trench profiles obtained from the ICP system were more tapered
with thicker sidewall films compared to those from the helicon system. The trench etch profiles with Cl2rHBrrO2plasma
in the ICP system appeared to be double-sloped. X-ray photoelectron spectroscopy XPS.analysis indicated that N2 addition
to Cl2rHBrrO2plasma induced the formation of Si`N bonds in the sidewall films, in addition to the Si`O and Si`Br
bonds observed with Cl2rHBrrO2. The sidewall films formed in Cl2rHBrrO2plasma showed higher oxygen intensities
and chemical binding energies compared to those formed in Cl2rHBrrN2rO2 plasma. q2000 Elsevier Science B.V. All
rights reserved.
Keywords
Helicon , Inductively coupled plasma , Trench , Chemical binding energy , XPS , Si defects
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
996434
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