Investigation of the atomic crystal plane relief by X-ray epitaxial film interferometer

Translation Moire´ pictures were first observed in double crystal X-ray topographs recorded for the epitaxial SirSi porous layerrSi substrate heterosystem. The relief of atomic hkl.planes, which are usually transformed into curved surfaces in real epitaxial films, can be studied using these pictures. Their relief amplitude is registered with accuracy better than 0.1 nm. Distorted crystal lattice areas vary from dozens micrometers to several millimeters along the directions parallel to the interface. The effect of technological factors non-registered before on the lattice distortions is observed. Absorbates are found to influence the thickness of a porous Si layer under ordinary conditions as well as in organic solvents toluene and acetone.. q2000 Elsevier Science B.V. All rights reserved