Electronic structure, conductivity and carrier mobility in very thin epitaxial CrSi 111/ layers with Si 111/63=63r30 LEED pattern

In situ Hall measurements, ex situ Hall and Seebeck coefficient temperature measurements of very thin 0.3–2.4 nm. CrSi 111.epitaxial layers with Si 111.63=63r308 LEED pattern are presented. The sheet p-type conductivity in CrSi 111. layers was observed from the chromium thicknesses of 0.9 nm. Chromium monosilicide layer 2.4 nm.displayed the metallic properties at room temperature by optical spectroscopy data. Sheet hole concentration was nearly constant in the temperature range of 300–500 K, but activated at high temperatures. q2000 Elsevier Science B.V. All rights reserved.