Formation of the CorSi 111/7=7 interface: AES- and EELS-study

Formation of the CorSi 111.7=7 interface has been investigated by methods of electron energy loss spectroscopy EELS.and Auger-electron spectroscopy AES.. The sequence of surface and thin-film phases at ds0–1, 2 and 3 ML, and Co-terminated bulk phases CoSi2, CoSi, Co2Si.at ds4, 6–11, and 13–30 ML has been established. It has been shown that the structure of phases at ds0–1 ML changes during annealing, while that at ds2 ML does not change. At d,3 ML, a phase extending on thickness with layered structure, which transforms into CoSi2 at T)4508C, has been detected. This phase type grows in a wide composition range up to Co thickness of 11 ML under the layer-by-layer Co deposition and annealing. q2000 Elsevier Science B.V. All rights reserved