Study of Fe deposition upon a layered compound: GaSe

Fe has been sequentially deposited under ultra-high vacuum, from less than 1 ML up to over 120 ML 1 ML refers to the GaSe surface, f8=1014 atomsrcm2., onto the clean 001. passive face of a 10-nm thick f12 layers. GaSe film epitaxially grown by MBE onto a Si 111.1=1-H substrate and kept at room temperature. From low-energy electron diffraction LEED., Auger electron spectroscopy AES.and photoemission yield spectroscopy PYS.measurements, a model in which Fe atoms intercalate into the layered semiconductor at room temperature is proposed. It assumes the formation of a ternary compound, which maintains the GaSe surface structure until saturation of the whole layered film by intercalated Fe, which would involve two Fe monolayers per pseudo-van der Waals gap. q2000 Elsevier Science B.V. All rights reserved.