Reconstructions of GaN and InGaN surfaces

The reconstruction and growth kinetics of gallium nitride 0001.and 0001.surfaces are studied using scanning tunneling microscopy STM., reflection high-energy electron diffraction RHEED.and low-energy electron diffraction LEED.. Results for bare GaN surfaces are summarized, with particular attention paid to the Apseudo-1=1B reconstruction of the 0001.face. Changes in the surface structure and kinetic processes due to indium co-deposition during growth are discussed. q2000 Elsevier Science B.V. All rights reserved.