Title of article
Raman spectroscopy of surface phonons on Sb-terminated Si 001/
Author/Authors
K. Hinrichs، نويسنده , , J.R. Power، نويسنده , , N. Esser، نويسنده , , W. Richter، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
5
From page
185
To page
189
Abstract
We study the surface structure of Sb-terminated singular on-axis.and vicinal 48 offcut inw110x. Si 001. by Raman
spectroscopy RS.. In the Raman spectra three surface phonons with A1-symmetry are identified at 80 cmy1, 130.5 cmy1
and 162 cmy1. The polarisation dependent Raman scattering intensities for the singular and vicinal samples are found to be
correlated with the different surface reconstructions. After deposition of Sb at 2608C and further annealing to 4008C and
6008C, a nearly balanced ratio of 2=1.: 1=2.domains for the singular sample and a predominantly 2=1.reconstructed
surface for the vicinal sample is derived from RS, in agreement with LEED results. In contrast, after Sb deposition at 6008C,
a balanced ratio of 2=1.and 1=2.reconstructed domains is found for vicinal as well as for singular Si 001.. q2000
Elsevier Science B.V. All rights reserved.
Keywords
Raman spectroscopy , Surface phonons , Sb-terminated Si 001.
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
996504
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