• Title of article

    Oxide formation on the CdTe 111/A 1=1/ surface

  • Author/Authors

    B.J. Kowalski، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2000
  • Pages
    5
  • From page
    237
  • To page
    241
  • Abstract
    A CdTe 111.A 1=1.surface, prepared in situ by argon ion bombardment and annealing at 2508C., was oxidized at the pressure of 1=10y5–5=10y5 Torr of molecular oxygen excited by the hot filament of the ion gauge. The surface atomic structure was studied by low-energy electron diffraction LEED.. The surface chemical composition and the oxidation process were monitored by recording the energy position and shape of Te 3d, Cd 3d, O 1s and C 1s core level peaks by X-ray photoemission spectroscopy. The excess of Te on the clean CdTe 111.A 1=1.surface was detected. Then, the increase of oxygen bound on the surface was observed as a function of the gas exposure. Symptoms of selective oxidation of Te atoms on the surface and in subsurface region were revealed. q2000 Elsevier Science B.V. All rights reserved.
  • Keywords
    Cadmium telluride , Oxygen , Photoelectron spectroscopy , semiconductors
  • Journal title
    Applied Surface Science
  • Serial Year
    2000
  • Journal title
    Applied Surface Science
  • Record number

    996513