Title of article
Oxide formation on the CdTe 111/A 1=1/ surface
Author/Authors
B.J. Kowalski، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
5
From page
237
To page
241
Abstract
A CdTe 111.A 1=1.surface, prepared in situ by argon ion bombardment and annealing at 2508C., was oxidized at the
pressure of 1=10y5–5=10y5 Torr of molecular oxygen excited by the hot filament of the ion gauge. The surface atomic
structure was studied by low-energy electron diffraction LEED.. The surface chemical composition and the oxidation
process were monitored by recording the energy position and shape of Te 3d, Cd 3d, O 1s and C 1s core level peaks by
X-ray photoemission spectroscopy. The excess of Te on the clean CdTe 111.A 1=1.surface was detected. Then, the
increase of oxygen bound on the surface was observed as a function of the gas exposure. Symptoms of selective oxidation of
Te atoms on the surface and in subsurface region were revealed. q2000 Elsevier Science B.V. All rights reserved.
Keywords
Cadmium telluride , Oxygen , Photoelectron spectroscopy , semiconductors
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
996513
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