Photoemission measurements of quantum states in accumulation layers at narrow band gap III–V semiconductor surfaces

Tiny amounts of cesium adsorbed on cleaved InSb 110.surfaces result in a strong downward band bending BB.and creates a two-dimensional 2D.electron channel in the sub-surface region. For the first time, electron emission arising from this channel was observed for this material. We compare it to the similar situation met previously with InAs 110.. In this last case, new high-resolution measurements allow to determine the dispersions of the quantized energy levels, and to derive the average effective mass of the carriers in the channel. For both systems, self-consistent calculations and model-function curve fittings support the experimental results. q2000 Elsevier Science B.V. All rights reserved