Misfit dislocations and radiative efficiency of In Ga NrGaN x 1yx quantum wells

We report results of calculations of radiative efficiency of In Ga N quantum wells embedded in wurtzite GaN x 1yx epilayer. It was found that misfit dislocations with density up to ;105–6 cmy1 could improve the quantum efficiency of the In Ga N wells by more than 10 times because they reduce the quantum well built-in electric field. At higher densities, the x 1yx misfit dislocations suppress the quantum efficiency of the wells since they produce an additional channel of nonradiative recombination. q2000 Elsevier Science B.V. All rights reserved