Raman and photoluminescence spectroscopy from as grown and 147 keV Arq-ion implanted Al Ga AsrGaAs quantum wells

The AL Ga AsrGaAs quantum wells QWS.were subjected to 147 keV Arq-ion bombardment. The response of the x 1yx QWS was studied by means of the secondary ion mass spectroscopy SIMS., low temperature photoluminescence LTPL. and the inelastic light scattering spectroscopy. The damage accumulation in the QWS leads to a shift of quasiparticle energy levels towards lower energies in QWS and to a decrease of LO1and LO2frequency modes of the ALxGa1yx As slabs. No good recovery has been found after annealing. q2000 Elsevier Science B.V. All rights reserved.