Electronic structure of ultrathin AlAs 100/ layers buried in GaAs

The electronic structure of 1, 2 and 5 monolayers ML.of AlAs 100.buried in GaAs has been investigated by ab initio calculations. Distinct differences are observed in the density of states DOS.. In particular, interface states are found for the 1-ML case and the outermost layer of the thicker slabs. q2000 Elsevier Science B.V. All rights reserved