Organic semiconductor interfaces: electronic structure and transport properties

Ultraviolet photoelectron spectroscopy UPS.and X-ray photoelectron spectroscopy XPS.have been used to investigate a wide range of metalrorganic and organicrorganic semiconductor interfaces. UPS was used to determine the binding energies of the highest occupied molecular orbitals and vacuum level positions, while XPS was used to find evidence of chemical interactions at these heterointerfaces. It was found that, with a few exceptions, the vacuum levels align at most organicrorganic interfaces, while strong interface dipoles, which abruptly offset the vacuum level, exist at virtually all metalrorganic semiconductor interfaces. Furthermore, strong dipoles exist at metalrorganic semiconductor interfaces at which the Fermi level is completely unpinned within the semiconductor gap implying that the dipoles are not the result of populating or emptying Fermi level-pinning gap states. q2000 Elsevier Science B.V. All rights reserved