Optical characterisation of PTCDA films grown on passivated semiconductor substrates

3,4,9,10-Perylenetetracarboxylic dianhydride PTCDA. was deposited on passivated Si 111. and GaAs 001. surfaces using organic molecular beam deposition OMBD.. The growth of the PTCDA films was monitored in situ and on-line by means of Raman spectroscopy. In addition, ex situ infrared IR. spectra were recorded in order to observe the non-Raman active modes. Raman and IR spectra reveal molecular vibrational modes, allowing us to characterize the structural quality of the PTCDA films and the interaction with the substrate. q2000 Elsevier Science B.V. All rights reserved.