Arsenic flux dependence of InAs nanostructure formation on GaAs 211/B surface

We have studied the influence of As flux on InAs nanostructures on GaAs 211.B surfaces grown by molecular beam epitaxy MBE.at various growth temperatures TS.. It is shown that isotropic quantum dots QDs.are formed at low TS under high As pressure condition. However, non-isotropic nanostructures, quantum dashes QDHs., are formed under low As flux conditions. It is also shown that the sizes of nanostructure become larger with increasing TS. The shapes of nanostructure depend on As flux as well as TS. q2000 Elsevier Science B.V. All rights reserved.