Title of article
Van der Waals-xenotaxy: growth of GaSe 0001/on low index silicon surfaces
Author/Authors
R. Rudolph، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
5
From page
437
To page
441
Abstract
Thin films of the layered chalcogenide GaSe were deposited on Si 111., Si 110., and Si 100.surfaces by molecular beam
epitaxy. The interface formation was investigated with photoemission and LEED. In all cases GaSe grows with its hexagonal
0001.axis normal to the substrate surfaces. q2000 Elsevier Science B.V. All rights reserved
Keywords
Van der Waals-xenotaxy , GaSe 0001. , Silicon surfaces
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
996549
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